K4A4G045WD-BCRC vs K4A4G085WG-BCWE Vergleich
Detaillierter Direktvergleich von K4A4G045WD-BCRC von Samsung Electronics und K4A4G085WG-BCWE von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A4G045WD-BCRC | K4A4G085WG-BCWE |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,45 | $2,68 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM (Volatile) |
| Density | 4 Gb | — |
| Speicherorganisation | 1G x4 | — |
| Die Generation | D-die | — |
| Supply Voltage VDD | 1.2 V | — |
| Speed Grade / Data Rate | BCRC (2400 Mbps per Samsung product selection guide) | — |
| Gehäuse | TFBGA-78 (FBGA-78) | FBGA-78 (BCW) |
| Number of Terminals | 78 | — |
| Self Refresh | Yes | — |
| Montageart | Surface Mount | Surface Mount |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Clock Frequency | [DATA_NEEDED: CK frequency for BCRC bin] | — |
| CAS-Latenz | [DATA_NEEDED: CL for BCRC bin] | — |
| Bank Architecture | DDR4 8 internal banks with bank groups | — |
| Refresh | Self refresh supported (per Partstack listing) | [DATA_NEEDED: refresh rate specification] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Lead Free Status | [DATA_NEEDED: lead-free status] | — |
| Packaging Option | [DATA_NEEDED: tape and reel quantity] | — |
| Speichergröße | — | 4 Gb |
| Memory Organization | — | 512M x 8 |
| Datenrate | — | 3200 Mbps/pin |
| Speed Class | — | DDR4-3200 |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | D-die DDR4 |
| Schnittstelle | — | Parallel (DDR4) |
| Burst Length | — | BL8 |
| DLL Mode | — | DLL Enabled (per datasheet timing) |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |
| Packaging | — | Tray |