K4AAG085WM-BCRC vs K4AAG085WA-BCTD Vergleich
Detaillierter Direktvergleich von K4AAG085WM-BCRC von Samsung Electronics und K4AAG085WA-BCTD von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4AAG085WM-BCRC | K4AAG085WA-BCTD |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,00 | $10,18 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | [DATA_NEEDED: exact density in Gb] | 16 Gbit (2 GB) |
| Speicherorganisation | x8 | 2G x 8 |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Max Data Rate | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) | — |
| Schnittstelle | SSTL12 | DDR4 parallel, JEDEC DDR4 ballout |
| Gehäuse | 78-ball FBGA | 78-ball FBGA (78FBGA) |
| Montageart | Surface Mount | Surface Mount |
| Architecture | Bank-group DDR4 | — |
| Termination | On-Die Termination (ODT) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| CAS-Latenz | [DATA_NEEDED: CL of -BCRC speed grade] | — |
| Clock | Differential clock CK/CK# | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Datenrate | — | 2666 Mbps |
| Versorgungsspannung | — | 1.2 V |
| Speed Grade | — | DDR4-2666 (-BCTD) |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Burst Length | — | BL8 (DDR4 standard) |
| Application Domain | — | Computing, networking, industrial memory |
| Manufacturing Standard | — | JEDEC DDR4 SDRAM |
| Lead Time / Stock | — | [DATA_NEEDED: current stock status] |