K4AAG165WA-BCPB vs K4A8G165WB-BCPB Vergleich
Detaillierter Direktvergleich von K4AAG165WA-BCPB von Samsung Electronics und K4A8G165WB-BCPB von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K4AAG165WA-BCPB - 16Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4AAG165WA-BCPB ✓ AktivSpezifikationsvergleich
| Parameter | K4AAG165WA-BCPB | K4A8G165WB-BCPB |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $63,79 | $2,30 |
| Speichertyp | Volatile DRAM (DDR4 SDRAM) | — |
| Technology | DDR4 | — |
| Density | 16 Gb | 8 Gb |
| Speicherorganisation | 1G x 16 | 512M x 16 |
| Datenrate | 3200 Mbps | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Interface Voltage (VDDQ) | 1.2 V | — |
| Gehäuse | FBGA-96 | 96-ball FBGA (TFBGA-96) |
| Montageart | Surface Mount | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature for BCPB grade] | 0°C to 85°C |
| Memory Format | DRAM | — |
| Packaging | Tray | — |
| Product Status | Active | — |
| Power Consumption | 25% lower than DDR3 (per Samsung DDR4 family) | — |
| Bank Group Architecture | Yes (DDR4 internal bank groups) | — |
| On-Die Termination (ODT) | Yes | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Max Capacity Family | Up to 32GB component (Samsung DDR4 family) | — |
| Speed Grade | — | 2133 Mbps (PC4-17000) |
| Versorgungsspannung | — | 1.2 V (1.14 V to 1.26 V) |
| Burst Length | — | 8 (BL8) |
| Burst Type | — | Sequential and Interleave |
| CAS-Latenz | — | Programmable (e.g., 15, 16, 18) |
| Refresh | — | Auto and Self Refresh |
| Number of Terminals | — | 96 |
| Package Code | — | TFBGA |
| Package Shape | — | RECTANGULAR |
| Terminal Position | — | BOTTOM |