K4AAG165WM-BCRC vs K4AAG165WA-BCTD Vergleich
Detaillierter Direktvergleich von K4AAG165WM-BCRC von Samsung Electronics und K4AAG165WA-BCTD von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K4AAG165WM-BCRC - 16Gb DDR4 x16 SDRAM 3200Mbps | Samsung
K4AAG165WM-BCRC ✓ AktivSpezifikationsvergleich
| Parameter | K4AAG165WM-BCRC | K4AAG165WA-BCTD |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $22,60 | $60,59 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | — |
| Speicherorganisation | 1G x 16 | — |
| Datenrate | 3200 Mbps | 2666 Mbps |
| Supply Voltage (VDD) | 1.2 V | — |
| Schnittstelle | DDR4 (SSTL-12) | Synchronous, DDR4 |
| Gehäuse | 96-ball FBGA | 96-FBGA |
| Montageart | Surface Mount | Surface Mount |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask Function | Yes | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range for K4AAG165WM-BCRC] | 0C to +85C |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency at 3200 Mbps] | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Speichergröße | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Versorgungsspannung | — | 1.2 V |
| Memory Format | — | Volatile (DRAM) |
| Bank Architecture | — | DDR4 bank-group architecture |
| Technology Family | — | DDR4 SDRAM (Samsung K4AAG165WA series) |
| Application Class | — | Computing, embedded, consumer main memory |
| Package Family | — | FBGA -> fine-pitch BGA -> surface mount |
| Temperature Grade | — | Commercial (0C to +85C) |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |