K4RAH086VB-BIQK vs K4RAH165VB-BIQK Vergleich
Detaillierter Direktvergleich von K4RAH086VB-BIQK von Samsung Electronics und K4RAH165VB-BIQK von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RAH086VB-BIQK | K4RAH165VB-BIQK |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,25 | $0,00 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gb |
| Speicherorganisation | 2G x 8 | 1G x 16 |
| Datenrate | 4800 Mbps/pin | 4800 Mbps (MT/s) |
| Core Supply Voltage | 1.1 V (nominal) | — |
| Gehäuse | 82FBGA | [DATA_NEEDED: exact package ball count / FBGA designation] |
| Configuration | X8 | — |
| Speed Grade | BIQK (-BIQK bin) | — |
| ECC | On-die ECC (DDR5 standard) | — |
| Schnittstelle | DDR5 (CA reduced pin count) | — |
| Burst Length | 16 / 32 | — |
| Operating Mode | DLL enabled | — |
| RoHS-Status | Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CAS-Latenz | [DATA_NEEDED: CAS latency (CL)] | — |
| Refresh | [DATA_NEEDED: refresh rate specification] | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage (VDD) | — | 1.1 V |
| On-Die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| DLL Enabled Mode | — | Yes (spec mode per datasheet) |
| Marke | — | Samsung Semiconductor |