K4RCH046VM-2CLP vs K4RCH046VM-2CCM Vergleich
Detaillierter Direktvergleich von K4RCH046VM-2CLP von Samsung Electronics und K4RCH046VM-2CCM von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4RCH046VM-2CLP | K4RCH046VM-2CCM |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | NRND |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $10,10 | $0,00 |
| Speichertyp | DDR5 SDRAM | DDR5 SDRAM |
| Density | 32 Gb | 32 Gb |
| Speicherorganisation | 4G x 4 | 4G x 4 |
| Datenrate | 6400 Mbps | 5600 Mbps |
| Versorgungsspannung | 1.1 V | 1.1 V |
| Betriebstemperatur | 0C to 85C | 0 to 85 C |
| Gehäuse | 78-FBGA | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Configuration | x4 component | — |
| Schnittstelle | DDR5 (SSTL-style low-voltage signaling) | — |
| Family Speed Range (Samsung DDR5) | up to 7200 Mbps | — |
| Family Density Range (Samsung DDR5) | 16 Gb to 32 Gb | — |
| Power Efficiency vs DDR4 | Approx. 30% greater | — |
| Product Status (per distributor listing) | Sample / Active supply via distribution | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Product Status | — | Sample |
| Access Latency (CL) | — | [DATA_NEEDED: CAS latency] |
| Refresh Rate | — | [DATA_NEEDED: refresh rate] |
| Schnittstellentyp | — | [DATA_NEEDED: interface type] |
| On-Die ECC | — | [DATA_NEEDED: on-die ECC support] |