K9EUGY8S0M-CCK0 vs K9DUGY8S0M-CCK0 Vergleich

Detaillierter Direktvergleich von K9EUGY8S0M-CCK0 von Samsung Electronics und K9DUGY8S0M-CCK0 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K9EUGY8S0M-CCK0 K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung

K9EUGY8S0M-CCK0 - 256Gb TLC V-NAND Flash | Samsung

K9EUGY8S0M-CCK0 ✓ Aktiv
Samsung Electronics
K9DUGY8S0M-CCK0 K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 ✓ Aktiv

Spezifikationsvergleich

Parameter K9EUGY8S0M-CCK0 K9DUGY8S0M-CCK0
Marke Samsung Electronics Samsung Electronics
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $0,00
Manufacturer Samsung Electronics Samsung Electronics
Product Type 3D TLC V-NAND Flash Memory —
Density [DATA_NEEDED: total device density in Gb] [DATA_NEEDED: density]
Cell Type TLC (3 bits per cell) —
V-NAND Layers [DATA_NEEDED: layer count] —
Schnittstelle [DATA_NEEDED: interface type, e.g. Toggle DDR] [DATA_NEEDED: interface type/width]
Supply Voltage VCC [DATA_NEEDED: VCC core supply voltage] —
Supply Voltage VCCQ [DATA_NEEDED: VCCQ I/O supply voltage] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Package Type [DATA_NEEDED: FBGA ball count and dimensions] —
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Grade Suffix CCK0 (standard commercial grade) —
Montageart Surface Mount (BGA) Surface Mount
RoHS-Status [DATA_NEEDED: RoHS compliance status] unknown
Product Family — K9 series NAND Flash (V-NAND)
Speichertyp — NAND Flash (raw, controller-managed)
Cell Technology — V-NAND (vertical charge-trap)
Versorgungsspannung — [DATA_NEEDED: VCC range]
Page Program Time — [DATA_NEEDED: tPROG]
Block Erase Time — [DATA_NEEDED: tBERS]
Read Time — [DATA_NEEDED: tR]
Gehäuse — [DATA_NEEDED: package code and pin count]
P/E Cycle Endurance — [DATA_NEEDED: endurance]

Datenblätter & Ressourcen

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