K9UMGB8U7M vs K9LCG08U1M Vergleich
Detaillierter Direktvergleich von K9UMGB8U7M von Samsung Electronics und K9LCG08U1M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K9UMGB8U7M | K9LCG08U1M |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Flash |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $11,85 |
| Speichertyp | NAND Flash | NAND Flash, MLC |
| Manufacturer | Samsung Electronics | — |
| Family | K9U series NAND Flash | — |
| Data Interface | [DATA_NEEDED: Data Interface] | — |
| Density | [DATA_NEEDED: Memory Density] | 64 Gbit (8 GB) |
| Speicherorganisation | [DATA_NEEDED: Memory Organization] | x8 I/O |
| Cell Type | [DATA_NEEDED: Cell Type (SLC/MLC/TLC)] | MLC (2 bits per cell) |
| Versorgungsspannung | [DATA_NEEDED: Supply Voltage] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: Page Size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: Block Size] | [DATA_NEEDED: block size] |
| Read Time | [DATA_NEEDED: Read Time] | — |
| Program Time | [DATA_NEEDED: Program Time] | — |
| Endurance | [DATA_NEEDED: Program/Erase Cycles] | [DATA_NEEDED: program/erase cycles] |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Gehäuse | [DATA_NEEDED: Package Type] | BGA |
| Montageart | [DATA_NEEDED: Mounting Type] | Surface Mount |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | unknown |
| Schnittstelle | — | Asynchronous multiplexed NAND I/O |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |