K9UMGB8U7M vs K9MDG08U5M Vergleich
Detaillierter Direktvergleich von K9UMGB8U7M von Samsung Electronics und K9MDG08U5M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K9UMGB8U7M | K9MDG08U5M |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $35,50 |
| Speichertyp | NAND Flash | MLC Large Block NAND Flash |
| Manufacturer | Samsung Electronics | — |
| Family | K9U series NAND Flash | — |
| Data Interface | [DATA_NEEDED: Data Interface] | — |
| Density | [DATA_NEEDED: Memory Density] | 16 Gbit (2 GB) |
| Speicherorganisation | [DATA_NEEDED: Memory Organization] | 16G x 8 bit |
| Cell Type | [DATA_NEEDED: Cell Type (SLC/MLC/TLC)] | MLC (2 bits per cell) |
| Versorgungsspannung | [DATA_NEEDED: Supply Voltage] | — |
| Page Size | [DATA_NEEDED: Page Size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: Block Size] | [DATA_NEEDED: block size] |
| Read Time | [DATA_NEEDED: Read Time] | — |
| Program Time | [DATA_NEEDED: Program Time] | — |
| Endurance | [DATA_NEEDED: Program/Erase Cycles] | — |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Gehäuse | [DATA_NEEDED: Package Type] | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Montageart | [DATA_NEEDED: Mounting Type] | Surface Mount |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | unknown |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Schnittstelle | — | Asynchronous x8 multiplexed address/data |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |