L9779WD vs L9779WDM-TR Vergleich

Detaillierter Direktvergleich von L9779WD von STMicroelectronics und L9779WDM-TR von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter L9779WD L9779WDM-TR
Marke STMicroelectronics STMicroelectronics
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $5,85 $1,85
Manufacturer STMicroelectronics —
Part Number L9779WD —
Description Multifunction IC for engine management system —
Technology BCD6S —
Gehäuse 64-pin HiQUAD power package SOIC-20 (SO-20)
Montageart Surface Mount (Power Package) Surface Mount
Supply Voltage (VSUP) 6 V to 18 V (40 V transient) —
5V MCU Regulator 5 V nominal, up to 250 mA —
5V Sensor Supply 5 V nominal, up to 150 mA —
Communication Interface SPI (serial peripheral interface) —
Watchdog SPI challenge/response with Markov chain —
Injection Predrivers 4 channels (INJ1-INJ4) —
Ignition Predrivers Integrated —
Stepper Predriver 2 channels (idle air control / throttle) —
Relay Drivers Main relay, oil/oxygen sensor relay —
Tachometer / Hall Input TACH —
Reverse Battery Protection External diode on KEY_ON (internal pull-down) —
Betriebstemperatur -40 C to +150 C (junction) —
Qualification AEC-Q100 automotive grade —
RoHS-Status Compliant Compliant
Number of Channels — 4
Ausgangstyp — Low-Side Open-Drain
Supply Voltage Range — 4.5 V to 40 V
Maximum Output Current per Channel — 1 A
On-Resistance (Typical) — 0.5 ohm
Ruhestrom — 10 uA (standby)
PWM Frequency — Up to 20 kHz
Schnittstelle — SPI
Protection Features — Overcurrent, Overtemperature, Short-Circuit
Betriebstemperaturbereich — -40C to +150C
MSL-Level — 3 (168 hours)
AEC-Q100 — Qualified

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