L9779WDM-TR vs L9779WD Vergleich

Detaillierter Direktvergleich von L9779WDM-TR von STMicroelectronics und L9779WD von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter L9779WDM-TR L9779WD
Marke STMicroelectronics STMicroelectronics
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,85 $5,85
Number of Channels 4 —
Ausgangstyp Low-Side Open-Drain —
Supply Voltage Range 4.5 V to 40 V —
Maximum Output Current per Channel 1 A —
On-Resistance (Typical) 0.5 ohm —
Ruhestrom 10 uA (standby) —
PWM Frequency Up to 20 kHz —
Schnittstelle SPI —
Protection Features Overcurrent, Overtemperature, Short-Circuit —
Betriebstemperaturbereich -40C to +150C —
Gehäuse SOIC-20 (SO-20) 64-pin HiQUAD power package
Montageart Surface Mount Surface Mount (Power Package)
MSL-Level 3 (168 hours) —
RoHS-Status Compliant Compliant
AEC-Q100 Qualified —
Manufacturer — STMicroelectronics
Part Number — L9779WD
Description — Multifunction IC for engine management system
Technology — BCD6S
Supply Voltage (VSUP) — 6 V to 18 V (40 V transient)
5V MCU Regulator — 5 V nominal, up to 250 mA
5V Sensor Supply — 5 V nominal, up to 150 mA
Communication Interface — SPI (serial peripheral interface)
Watchdog — SPI challenge/response with Markov chain
Injection Predrivers — 4 channels (INJ1-INJ4)
Ignition Predrivers — Integrated
Stepper Predriver — 2 channels (idle air control / throttle)
Relay Drivers — Main relay, oil/oxygen sensor relay
Tachometer / Hall Input — TACH
Reverse Battery Protection — External diode on KEY_ON (internal pull-down)
Betriebstemperatur — -40 C to +150 C (junction)
Qualification — AEC-Q100 automotive grade

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