LXES03TAA1-142 vs LXES03TBB1-141 Vergleich

Detaillierter Direktvergleich von LXES03TAA1-142 von Murata Manufacturing und LXES03TBB1-141 von Murata Manufacturing. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Murata Manufacturing
LXES03TAA1-142 LXES03TAA1-142 - 5V Bi-Dir ESD TVS Diode, 0201 CSP | Murata

LXES03TAA1-142 - 5V Bi-Dir ESD TVS Diode, 0201 CSP | Murata

LXES03TAA1-142 ✓ Aktiv
Murata Manufacturing
LXES03TBB1-141 LXES03TBB1-141 - 0.05pF ESD/TVS Diode 2-CSP | Murata

LXES03TBB1-141 - 0.05pF ESD/TVS Diode 2-CSP | Murata

LXES03TBB1-141 ✓ Aktiv

Spezifikationsvergleich

Parameter LXES03TAA1-142 LXES03TBB1-141
Marke Murata Manufacturing Murata Manufacturing
Kategorie Surge Protectors Surge Protectors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,14 $0,02
Manufacturer Murata Manufacturing Murata Manufacturing
Series LXES T Series (LXES03 family) —
Device Type ESD Protection TVS Diode (Bidirectional) Bidirectional TVS / ESD Protection Diode
Gehäuse 2-bump CSP / DFN0603-2 (0201 / 0603 metric) —
Package Dimensions 1.6 mm x 0.8 mm x 0.6 mm (L x W x T, ±0.15 mm) —
Working Voltage (Vwm) 5 V —
Breakdown Voltage (Vbr) 7 V (typical) —
Typical Capacitance 5 pF —
Polarity Bidirectional —
Montageart Surface Mount Surface Mount
ESD Rating [DATA_NEEDED: IEC 61000-4-2 contact/air kV rating] —
Peak Pulse Current (Ipp) [DATA_NEEDED: peak pulse current rating] —
Clamping Voltage [DATA_NEEDED: Vc at Ipp] —
Leakage Current [DATA_NEEDED: Id at Vwm] —
Betriebstemperatur [DATA_NEEDED: operating temperature range] -40C to +85C (consumer grade) [DATA_NEEDED: automotive grade upper limit]
Automotive Qualification AEC-Q100 (per Murata product spec snippet) —
Recommended Applications Automotive powertrain/safety equipment Consumer, Industrial, Mobile, RF signal line protection
Compliance RoHS (assumed compliant; [DATA_NEEDED: explicit certificate]) —
Product Series — T Series (Silicon ESD Protection)
Number of Channels — 1 ch
Gehäuse / Bauform — 2-CSP (0.60 x 0.30 mm)
Capacitance (Typical) — 0.45 pF
Reverse Stand-Off Voltage (VRWM) — 5.5 V
Breakdown Voltage (VBR min) — 7.0 V
Peak Pulse Power (8/20 us, Ppp) — 125 W
ESD Contact Discharge (IEC 61000-4-2) — +/-8 kV
ESD Air Discharge (IEC 61000-4-2) — +/-15 kV to +/-25 kV (model dependent)
Length — 0.60 mm +/-0.05 mm
Width — 0.30 mm +/-0.05 mm
Thickness — [DATA_NEEDED: thickness mm]
RoHS-Status — Compliant

Datenblätter & Ressourcen

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