M29F160FB55N3F2 vs M29F200FT55M3F2 Vergleich
Detaillierter Direktvergleich von M29F160FB55N3F2 von Micron Technology und M29F200FT55M3F2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive
M29F200FT55M3F2 ✓ AktivSpezifikationsvergleich
| Parameter | M29F160FB55N3F2 | M29F200FT55M3F2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,60 | $1,85 |
| Speichertyp | Parallel NOR Flash | Parallel NOR Flash |
| Density | 16777 kbits (16 Mbit) | 2 Mbit (2097 kbits) |
| Speicherorganisation | 1 Mword x 16 bits / 2 Mbyte x 8 bits | 256K x 8 / 128K x 16 |
| Number of Words | 1000 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 55 ns | 55 ns |
| Versorgungsspannung | 5 V | — |
| Boot Block Architecture | Bottom Boot Block | Top Boot Block |
| Betriebstemperatur | -40 to +125 C | -40C to +125C |
| Schnittstelle | Parallel | — |
| Package Type | 48-TSOP | — |
| Montageart | Surface Mount | Surface Mount |
| Termination Finish | Lead-free (F2 suffix) | — |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Block Protection | Hardware boot block protection | — |
| RoHS-Status | Compliant (lead-free) | [DATA_NEEDED: RoHS status] |
| Speed Grade (from MPN) | 55 (55 ns) | — |
| Supply Voltage (VCC) | — | 5 V |
| Programming Interface | — | Embedded program/erase controller, byte or word |
| Automotive Qualification | — | Yes |
| Gehäuse | — | 44-pin SO (TSOP) |
| Packaging | — | Tape & Reel (T/R) |
| Number of Words (x16 mode) | — | 128 K |
| Bits per Word (x16 mode) | — | 16 bits |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |