M29F200FT55M3F2 vs M29F800FB55M3F2 Vergleich
Detaillierter Direktvergleich von M29F200FT55M3F2 von Micron Technology und M29F800FB55M3F2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive
M29F200FT55M3F2 ✓ AktivSpezifikationsvergleich
| Parameter | M29F200FT55M3F2 | M29F800FB55M3F2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,85 | $3,72 |
| Speichertyp | Parallel NOR Flash | NOR Flash, Parallel |
| Density | 2 Mbit (2097 kbits) | 8389 kbits (8 Mbit) |
| Speicherorganisation | 256K x 8 / 128K x 16 | 512K x 16-bit / 1M x 8-bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | 5 V |
| Boot Block Architecture | Top Boot Block | — |
| Programming Interface | Embedded program/erase controller, byte or word | — |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Automotive Qualification | Yes | Auto Grade 3 (temperature grade 3, +125C) |
| Gehäuse | 44-pin SO (TSOP) | 44-pin SO (SOIC-44) |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | — |
| Number of Words (x16 mode) | 128 K | — |
| Bits per Word (x16 mode) | 16 bits | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Number of Words | — | 512 k |
| Bits per Word | — | 16 bits |
| Boot Block Type | — | Bottom Boot Block |
| Schnittstelle | — | Parallel, Asynchronous |
| Programming | — | Embedded byte/word program algorithms |
| OTP Area | — | 64 byte |
| Packing | — | Tape & Reel (T/R) |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |