M29F800FT55N3E2 vs M29W800FT70N3E Vergleich
Detaillierter Direktvergleich von M29F800FT55N3E2 von Micron Technology und M29W800FT70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29F800FT55N3E2 | M29W800FT70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Flash |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,98 | $2,05 |
| Speichertyp | NOR Flash | NOR Flash (Parallel) |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | 8 Mbit |
| Access Time | 55 ns | 70 ns |
| Versorgungsspannung | 5 V | — |
| Schnittstelle | Parallel | Parallel, address/data bus |
| Boot Block Architecture | Top Boot Block | — |
| Betriebstemperatur | -40C to +125C | -40C to +125C |
| Gehäuse | 48-TSOP I | 48-TSOP I (12 x 20 mm, 0.5 mm pitch) |
| Montageart | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | [DATA_NEEDED: program/erase cycles] |
| Data Retention | >20 years (typical for family) | [DATA_NEEDED: data retention] |
| Ready/Busy Output | Yes | — |
| RoHS-Status | Compliant (E suffix = lead-free/RoHS) | [DATA_NEEDED: RoHS status] |
| Speicherorganisation | — | 1M x 8 / 512K x 16 |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Programming / Erase Supply | — | Single supply at VCC (2.7 V to 3.6 V) |
| Boot Block Location | — | Top boot block (FT variant) |
| Bus Width | — | 8-bit or 16-bit (BYTE pin selectable) |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Block Organization | — | [DATA_NEEDED: block size/organization] |