MBRS260T3G vs NRVBS260NT3G Vergleich

Detaillierter Direktvergleich von MBRS260T3G von onsemi und NRVBS260NT3G von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter MBRS260T3G NRVBS260NT3G
Marke onsemi onsemi
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,15 $0,13
Diode Type Schottky Power Rectifier (single) —
Gehäuse SMB (DO-214AA-style surface mount) SMB (DO-214AA)
DC Reverse Voltage (Vr) Max 60 V —
Average Rectified Forward Current (Io) 2 A —
Forward Voltage (Vf) Max @ If 630 mV @ 2 A —
Peak Non-Repetitive Surge Current (Ifsm) 25 A (8.3 ms half-sine, per datasheet) —
Reverse Recovery Time (trr) Negligible (Schottky, minority-carrier device) —
Betriebs-Sperrschichttemperatur -65C to +150C —
Storage Temperature -65C to +150C —
Montageart Surface Mount Surface Mount
Construction Epitaxial with oxide passivation and metal overlay contact Epitaxial with oxide passivation and metal overlay contact
Polarity Color band indicates cathode Cathode band
MSL-Level 1 per JEDEC J-STD-020 1 (per third-party listing)
RoHS-Status Compliant Compliant (ROHS3)
REACH Status Compliant Unaffected (per third-party listing)
Primary Applications Low-voltage high-frequency switching PSUs, free-wheeling, polarity protection —
Manufacturer — onsemi
Product Type — Schottky Power Rectifier
Peak Repetitive Reverse Voltage (VRRM) — 60 V
Average Rectified Forward Current (IF(AV)) — 2 A
Forward Voltage Drop (VF) at 2 A — 630 mV
Peak Forward Surge Current (IFSM) — [DATA_NEEDED: IFSM value]
Reverse Leakage Current (IR) at VRRM — [DATA_NEEDED: IR value]
Betriebs-Sperrschichttemperaturbereich — -55 C to +150 C (est. industry-standard for SMB Schottky)
Configuration — Single diode

Datenblätter & Ressourcen

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