MC68HC908QY2CPE vs MC68HC908QT1CFQ Vergleich
Detaillierter Direktvergleich von MC68HC908QY2CPE von NXP Semiconductors und MC68HC908QT1CFQ von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MC68HC908QY2CPE - 8-Bit 8MHz 1.5KB Flash MCU | NXP | DIP-16
MC68HC908QY2CPE ✓ AktivNXP Semiconductors
MC68HC908QT1CFQ - 8-Bit 8MHz HC08 MCU 1.5KB Flash | NXP
MC68HC908QT1CFQ ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | MC68HC908QY2CPE | MC68HC908QT1CFQ |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Microcontrollers | Microcontrollers |
| Lebenszyklusstatus | Aktiv | Letzte Kaufgelegenheit |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,69 | $1,40 |
| Core Processor | HC08 | — |
| Core Size | 8-Bit | — |
| Core Architecture | CISC, Von Neumann | — |
| Maximale Taktfrequenz | 8 MHz | 8 MHz internal bus |
| Program Memory Size | 1.5 KB (1.5K x 8) FLASH | — |
| RAM Size | 128 B | — |
| Number of I/O Lines | 13 | — |
| ADC | 6-channel, 8-bit on-chip | None |
| Versorgungsspannung | 3.3 V / 5 V | — |
| Betriebstemperatur | -40C to +85C (industrial) | -40C to +85C (industrial) |
| Gehäuse | 16-PDIP (0.300 inch / 7.62 mm) | 8-DFN-EP (4x4 mm) |
| Montageart | Through-Hole | Surface Mount |
| Peripherals | LVD, POR, PWM, Timer | — |
| Program Memory Type | FLASH (in-circuit programmable) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status from official NXP product page] | Compliant (lead-free 'CFQ' suffix) |
| Family | — | M68HC08 (HC08) |
| Core | — | 8-bit CISC, Von Neumann architecture |
| CPU Core | — | HC08 |
| Program Memory | — | 1.5 KB FLASH (1K user + 512B monitor) |
| RAM | — | 128 bytes |
| Operating Voltage | — | 2.7 V to 5.5 V |
| I/O Pins | — | 6 GPIO |
| Timers | — | 1 x 16-bit, 2-channel with PWM |
| On-Chip Analog Comparator | — | Yes |
| MSL-Level | — | 1 (unlimited at <=30C/85% RH) |
| FLASH Endurance | — | 100 program/erase cycles min (typ 1000) |
| On-Chip Debug | — | Background Debug Mode (BDM) |