MMG3001NT1 vs MMG3003NT1 Vergleich

Detaillierter Direktvergleich von MMG3001NT1 von NXP Semiconductors und MMG3003NT1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MMG3003NT1 MMG3003NT1 - InGaP HBT GPA, 40-3600 MHz, 20dB, 24dBm | NXP

MMG3003NT1 - InGaP HBT GPA, 40-3600 MHz, 20dB, 24dBm | NXP

MMG3003NT1 ✓ Aktiv

Spezifikationsvergleich

Parameter MMG3001NT1 MMG3003NT1
Marke NXP Semiconductors NXP Semiconductors
Kategorie RF Amplifiers RF Amplifiers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,68 $2,63
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Part Number MMG3001NT1 —
Technology InGaP HBT (Heterojunction Bipolar Transistor) InGaP HBT (Heterojunction Bipolar Transistor)
RF Type General Purpose Amplifier Cellular, PCS, PHS, WLL, BWA, VHF/UHF general purpose
Frequency Range 40 MHz to 3.6 GHz 40 MHz to 3600 MHz
Small-Signal Gain 20 dB (typical) 20 dB (typical)
Output P1dB 18.5 dBm —
Noise Figure 4.1 dB (typical) —
Supply Voltage (Vcc) 5 V typical, 5.6 V maximum —
Versorgungsstrom 58 mA typical 180 mA (typical)
Topologie Class A, internally biased —
Input Matching Internal, 50 ohm Internally matched
Output Matching Internal, 50 ohm Internally prematched
Gehäuse SOT-89 (TO-243AA) —
Montageart Surface Mount Surface Mount
Betriebstemperatur -40C to +85C [DATA_NEEDED: exact range from datasheet] [DATA_NEEDED: operating temperature range]
RoHS-Status Compliant [DATA_NEEDED: confirm from official datasheet] —
Output Power (P1dB) — 24 dBm (typical)
Versorgungsspannung — 6 V (typical), 7 V (max datasheet)
Operating Class — Class A, small-signal high linearity
Gehäuse / Bauform — SOT-89-4 / TO-243AA (4-pin + tab)
Packaging — Tape & Reel (TR)
ESD Protection — Integrated (per datasheet)

Datenblätter & Ressourcen

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