MMG3003NT1 vs MMG3001NT1 Vergleich

Detaillierter Direktvergleich von MMG3003NT1 von NXP Semiconductors und MMG3001NT1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MMG3003NT1 MMG3003NT1 - InGaP HBT GPA, 40-3600 MHz, 20dB, 24dBm | NXP

MMG3003NT1 - InGaP HBT GPA, 40-3600 MHz, 20dB, 24dBm | NXP

MMG3003NT1 ✓ Aktiv

Spezifikationsvergleich

Parameter MMG3003NT1 MMG3001NT1
Marke NXP Semiconductors NXP Semiconductors
Kategorie RF Amplifiers RF Amplifiers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,63 $1,68
Technology InGaP HBT (Heterojunction Bipolar Transistor) InGaP HBT (Heterojunction Bipolar Transistor)
RF Type Cellular, PCS, PHS, WLL, BWA, VHF/UHF general purpose General Purpose Amplifier
Frequency Range 40 MHz to 3600 MHz 40 MHz to 3.6 GHz
Small-Signal Gain 20 dB (typical) 20 dB (typical)
Output Power (P1dB) 24 dBm (typical) —
Versorgungsspannung 6 V (typical), 7 V (max datasheet) —
Versorgungsstrom 180 mA (typical) 58 mA typical
Operating Class Class A, small-signal high linearity —
Input Matching Internally matched Internal, 50 ohm
Output Matching Internally prematched Internal, 50 ohm
Gehäuse / Bauform SOT-89-4 / TO-243AA (4-pin + tab) —
Montageart Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
Betriebstemperatur [DATA_NEEDED: operating temperature range] -40C to +85C [DATA_NEEDED: exact range from datasheet]
ESD Protection Integrated (per datasheet) —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Part Number — MMG3001NT1
Output P1dB — 18.5 dBm
Noise Figure — 4.1 dB (typical)
Supply Voltage (Vcc) — 5 V typical, 5.6 V maximum
Topologie — Class A, internally biased
Gehäuse — SOT-89 (TO-243AA)
RoHS-Status — Compliant [DATA_NEEDED: confirm from official datasheet]

Datenblätter & Ressourcen

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