MPQ2222-PBFREE vs MPQ2222 Vergleich
Detaillierter Direktvergleich von MPQ2222-PBFREE von Central Semiconductor und MPQ2222 von Central Semiconductor. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Central Semiconductor
MPQ2222-PBFREE - Quad NPN BJT Array 40V 500mA TO-116 | Central Semiconductor
MPQ2222-PBFREE ✓ AktivCentral Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ AktivSpezifikationsvergleich
| Parameter | MPQ2222-PBFREE | MPQ2222 |
|---|---|---|
| Marke | Central Semiconductor | Central Semiconductor |
| Kategorie | Transistors | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,58 | $0,39 |
| Transistortyp | 4 NPN (Quad) BJT Array | — |
| Kollektor-Emitter-Spannung (Vceo) | 40 V | — |
| Kollektor-Basis-Spannung (Vcbo) | 75 V | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] |
| Emitter-Basis-Spannung (Vebo) | 6 V | [DATA_NEEDED: VEBO exact value] |
| Max Collector Current (IC) | 500 mA | — |
| Power Dissipation (Pd) | 650 mW | — |
| Übergangsfrequenz (ft) | 200 MHz | 200 MHz |
| Gehäuse | TO-116 (14-pin through-hole DIP) | 14-pin DIP (TO-116), Through Hole |
| Montageart | Through Hole | Through Hole |
| Number of Elements | 4 | — |
| Polarity | NPN | — |
| Application | General Purpose Amplifier/Switch | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/max] | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] |
| Lead Free | Yes (PBFREE suffix) | — |
| Packaging | Tube | — |
| Product Status | Active | — |
| Configuration | — | Quad NPN Transistor Array (4 independent devices) |
| Transistor Polarity | — | NPN Silicon |
| Collector-Emitter Voltage Rating | — | 40 V |
| Continuous Collector Current (per device) | — | 500 mA |
| Power Dissipation (total package) | — | 650 mW |
| Power Dissipation (per transistor) | — | [DATA_NEEDED: per-transistor dissipation value] |
| Operating and Storage Junction Temperature | — | [DATA_NEEDED: exact TJ range from datasheet] |
| Thermal Resistance (total package) | — | [DATA_NEEDED: thermal resistance value] |
| Marking | — | Full part number |
| RoHS-Status | — | Lead-free (PB Free suffix version available) |