MPX2100D vs MPX2050D Vergleich
Detaillierter Direktvergleich von MPX2100D von NXP Semiconductors und MPX2050D von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
MPX2050D - 50 kPa Differential Pressure Sensor | STMicroelectronics
MPX2050D ✓ AktivSpezifikationsvergleich
| Parameter | MPX2100D | MPX2050D |
|---|---|---|
| Marke | NXP Semiconductors | STMicroelectronics |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $17,80 | $5,40 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 kPa to 100 kPa (0 to 14.5 psi) | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) |
| Full-Scale Span (Typical) | 40 mV at 10 V excitation | — |
| Sensitivity (Nominal) | 0.4 mV/kPa | — |
| Supply Voltage (Recommended) | 10 V DC | — |
| Supply Voltage (Maximum) | 16 V DC | — |
| Ausgangstyp | Analog ratiometric Wheatstone bridge (millivolts) | Analog voltage (Wheatstone bridge, differential) |
| Pressure Port Configuration | Dual axial ports (differential) | — |
| Gehäuse | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch | 4-SIP Module (Unibody, ported) |
| Package Body Dimensions | 15.56 mm x 15.56 mm x 5.33 mm | — |
| Montageart | Through-hole SIP module | Through-hole SIP |
| Betriebstemperaturbereich | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] | — |
| On-Chip Temperature Compensation | Yes (factory laser-trimmed) | — |
| Technology | Silicon piezoresistive MEMS strain-gauge bridge | — |
| RoHS-Status | Compliant [DATA_NEEDED: confirm from NXP product page] | Compliant (per ST product page) |
| Diaphragm Material | Silicon [DATA_NEEDED: confirm] | — |
| Linearity | 0.1% to 0.3% typical [DATA_NEEDED: confirm] | ±0.5% (typical, full scale) |
| Maximum Overload Pressure | — | [DATA_NEEDED: maximum overload pressure] |
| Output Voltage Span | — | 0 mV to 40 mV (at 10 V excitation, 50 kPa) |
| Sensitivity (typical) | — | 0.45 mV/kPa (at 10 V excitation) |
| Excitation Voltage | — | 10 V DC (typical), [DATA_NEEDED: max Vex] |
| Accuracy | — | ±0.05% to ±0.2% (0°C to 85°C, Vex = 10 V) |
| Betriebstemperatur | — | -40°C to +125°C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Response Time | — | 5 kHz (resonance-limited, [DATA_NEEDED: rise time in ms]) |
| Bridge Resistance | — | 1.0 kΩ to 4.5 kΩ (input/output, typical [DATA_NEEDED: exact value]) |
| Port Configuration | — | Dual inlet (differential) |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |