MPX5010GSX vs MPXV5010GC6T1 Vergleich
Detaillierter Direktvergleich von MPX5010GSX von NXP Semiconductors und MPXV5010GC6T1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MPX5010GSX | MPXV5010GC6T1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $10,25 | $6,85 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | [DATA_NEEDED: max overload pressure] |
| Ausgangstyp | Analog Voltage | Analog Voltage, Ratiometric |
| Output Voltage Span | 0.2 V to 4.7 V | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | 4.75 V to 5.25 V |
| Versorgungsstrom | [DATA_NEEDED: supply current typical] | [DATA_NEEDED: typical supply current] |
| Accuracy | 1.0 % typical (per datasheet) | — |
| Response Time | [DATA_NEEDED: response time] | — |
| Betriebstemperatur | 0 C to 85 C | 0 C to +85 C |
| Port Size | Male 0.19 inch (4.93 mm) Tube, Side Port | — |
| Gehäuse / Bauform | 6-SIP Module (Case 867F) | — |
| Termination Style | Through-Hole PCB | — |
| Montageart | Through Hole | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Media Compatibility | Dry gases (air, non-corrosive) | Air and non-corrosive gases |
| Technology | Piezoresistive MEMS with on-chip ASIC | — |
| Manufacturer | — | NXP Semiconductors |
| Ausgangsspannungsbereich | — | 0.2 V to 4.7 V (at VCC = 5 V) |
| Pressure Port | — | Top-port male 0.13" (3.17 mm) tube |
| Gehäuse | — | 8-SO (Small Outline), Gull-Wing SMD |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Linearity | — | 1.0 % typical (over 0 kPa to 10 kPa) |
| Temperature Compensation | — | On-chip, 0 C to +85 C |
| Signal Conditioning | — | On-chip ASIC, calibrated |