MPXAZ4100A6U vs MPXA4100A6U Vergleich
Detaillierter Direktvergleich von MPXAZ4100A6U von NXP Semiconductors und MPXA4100A6U von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MPXAZ4100A6U | MPXA4100A6U |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,30 | $8,64 |
| Sensortyp | Absolute pressure sensor (MAP, manifold absolute pressure) | — |
| Operating Pressure Range | 20 kPa to 105 kPa (2.9 PSI to 15.23 PSI) | 20 kPa to 105 kPa (2.9 PSI to 15.23 PSI) |
| Pressure Type | Absolute | Absolute (Manifold Absolute Pressure) |
| Ausgangstyp | Analog voltage (ratiometric) | Analog voltage, ratiometric to Vcc |
| Ausgangsspannungsbereich | 0.3 V to 4.9 V | 0.3 V to 4.9 V |
| Full-Scale Span | 4.6 V nominal (4.9 V - 0.3 V) | — |
| Supply Voltage (VCC) | 4.85 V to 5.35 V (nominal 5.0 V) | — |
| Versorgungsstrom | [DATA_NEEDED: supply current] | [DATA_NEEDED: supply current] |
| Accuracy | ±1.8 %VFSS typical (per datasheet) | [DATA_NEEDED: accuracy %] |
| Betriebstemperatur | -40 °C to +125 °C | -40 C to +125 C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Gehäuse | 8-SMD Module (gull-wing leadless, surface mount) | — |
| Port Style | Axial through-hole manifold port (top) | Vertical (axially aligned to package) |
| Termination Style | PCB (surface mount) | — |
| Media Compatibility | Dry air and dry non-corrosive gases (media-resistant gel option A6U) | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: rohs status] |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Maximum Overload Pressure | — | 16.7 PSI (per distributor listing) |
| Transfer Function | — | 54 mV/kPa |
| Versorgungsspannung | — | 4.85 V to 5.35 V (5 V typical) |
| Gehäuse / Bauform | — | 8-SMD Module (SOP with port) |
| Technology | — | Piezoresistive (MEMS silicon) |
| On-Chip Signal Conditioning | — | Yes (calibrated and temperature compensated) |