MPXH6115AC6U vs MPXAZ4115AC6U Vergleich
Detaillierter Direktvergleich von MPXH6115AC6U von NXP Semiconductors und MPXAZ4115AC6U von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MPXH6115AC6U - 15-115 kPa Absolute Pressure Sensor, 5V, 8-SOIC
MPXH6115AC6U ✓ AktivSpezifikationsvergleich
| Parameter | MPXH6115AC6U | MPXAZ4115AC6U |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,75 | $10,95 |
| Pressure Type | Absolute | Absolute |
| Operating Pressure Range | 2.18 PSI to 16.68 PSI (15 kPa to 115 kPa) | — |
| Ausgangsspannungsbereich | 0.2 V to 4.7 V (at 5 V supply) | 0.2 V to 4.8 V |
| Versorgungsspannung | 4.75 V to 5.25 V (5 V typical) | 4.85 V to 5.35 V (5 V typical) |
| Sensitivity | 45.9 mV/kPa (typical) | — |
| Gehäuse | 8-SOIC (0.335 inch, 8.50 mm width) Top Port | 8-SMD, Gull Wing, Top Port |
| Port Type | Male - 0.13 inch (3.3 mm) Tube, Top | — |
| Betriebstemperaturbereich | -40 C to +125 C | — |
| Compensated Temperature Range | 0 C to +85 C | — |
| Signal Conditioning | On-chip bipolar op-amp + thin-film resistor network | — |
| Ausgangstyp | Analog, ratiometric to VCC | Analog Voltage |
| Montageart | Surface Mount | Surface Mount |
| Technology | Piezoresistive MEMS, monolithic silicon | — |
| Port Orientation | Top-side vertical | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status not in provided web data] |
| Pressure Range | — | 2.18 PSI to 16.68 PSI (15 kPa to 115 kPa) |
| Accuracy | — | ±1.5% |
| Port Style | — | Top port, Male - 0.13 in (3.17 mm) tube stub |
| Port Style Detail | — | Barbless |
| Betriebstemperatur | — | -40 °C to +125 °C |
| Case Outline | — | CASE 482A (Small Outline Package) |
| Sensing Technology | — | Piezoresistive silicon, on-chip signal conditioned |
| Eigenschaften | — | Temperature compensated, calibrated, media resistant |
| Output Impedance | — | [DATA_NEEDED: not in provided web data] |