MPXV5010GC7U vs MPXV5010GP Vergleich

Detaillierter Direktvergleich von MPXV5010GC7U von NXP Semiconductors und MPXV5010GP von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MPXV5010GC7U MPXV5010GC7U - 0-10kPa Differential Pressure Sensor | NXP

MPXV5010GC7U - 0-10kPa Differential Pressure Sensor | NXP

MPXV5010GC7U ✓ Aktiv

Spezifikationsvergleich

Parameter MPXV5010GC7U MPXV5010GP
Marke NXP Semiconductors STMicroelectronics
Kategorie Pressure Sensors Pressure Sensors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $10,05 $9,95
Pressure Type Differential / Gauge Vented Gauge
Operating Pressure Range 0 kPa to 10 kPa —
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating in kPa] —
Versorgungsspannung 4.75 V to 5.25 V (typ. 5.0 V) 5 V
Full-Scale Output (typ. @10 kPa) 4.5 V —
Zero-Pressure Offset 0.2 V to 0.85 V —
Supply Current (typ.) [DATA_NEEDED: supply current in mA] —
Betriebstemperaturbereich 0 °C to +85 °C —
Storage Temperature Range -30 °C to +100 °C —
Ausgangstyp Analog (ratiometric to VCC) Analog Voltage
Output Impedance < 50 ohm —
Accuracy (typ.) ±5 % of V_FSS (0-85 °C) —
Response Time [DATA_NEEDED: response time in ms] —
Gehäuse / Bauform SOP-8 (Case 1737), Surface Mount —
Port Configuration Dual axial horizontal ports (gauge) —
Media Compatibility Non-corrosive, non-ionic media (dry air, dry gases) —
Montageart Surface Mount Surface Mount
RoHS-Status [DATA_NEEDED: RoHS compliance] —
Pressure Range — 0 kPa to 10 kPa (0 PSI to 1.45 PSI)
Operating Pressure Max — 10 kPa
Ausgangsspannung — 0.2 V to 4.7 V
Versorgungsstrom — 5 mA typical
Sensitivity — 450 mV/kPa (approx, 0.2-4.7 V span)
Accuracy — [DATA_NEEDED: accuracy %FS]
Betriebstemperatur — 0 C to +85 C
Port Style — Male - 3.17 mm (0.13 in) Tube, Side Port
Gehäuse — 8-SMD, Gull Wing, Side Port
Sensor Technology — Piezoresistive (MEMS silicon)
Signal Conditioning — On-chip, temperature compensated, calibrated
Output Ratiometric — Yes (output scales with VDD)

Datenblätter & Ressourcen

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