MPXV7025GP vs MPXV5010DP Vergleich
Detaillierter Direktvergleich von MPXV7025GP von NXP Semiconductors und MPXV5010DP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MPXV7025GP - ±25kPa Compound Pressure Sensor, 8-SMD | NXP Semiconductors
MPXV7025GP ✓ AktivSpezifikationsvergleich
| Parameter | MPXV7025GP | MPXV5010DP |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $7,50 | $8,10 |
| Pressure Type | Compound (positive and vacuum) | Differential |
| Operating Pressure Range | ±3.63 PSI (±25 kPa) | 0 to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | [DATA_NEEDED: maximum overload] |
| Ausgangstyp | Analog voltage | Analog, Ratiometric |
| Ausgangsspannungsbereich | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Output Span | 4.5 V (typical) | — |
| Pressure Port | Male - 0.13" (3.18 mm) Tube, Side | — |
| Versorgungsspannung | 5 V typical (ratiometric output) | 5 V nominal (4.75 V to 5.25 V) |
| Versorgungsstrom | [DATA_NEEDED: supply current] | — |
| Accuracy | [DATA_NEEDED: accuracy %FS] | 5 % (over 0 C to 85 C) |
| Betriebstemperatur | -40C to +125C | -40 C to +125 C |
| Gehäuse / Bauform | 8-SMD, Gull Wing, Side Port | — |
| Montageart | Surface Mount | Surface Mount |
| Technology | Piezoresistive MEMS with on-chip ASIC | Piezoresistive, MEMS, On-chip Signal Conditioned |
| Port Style | Single side port with barbed stem | Male, 0.13 in (3.3 mm) tube, Dual, Same Side |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Response Time | — | 1 ms typical |
| Compensated Temperature | — | 0 C to 85 C |
| Gehäuse | — | 8-BSOP (0.475 in / 12.06 mm width), Dual Ports |