MRFE6S9160HSR3 vs MRF6S9160HSR3 Vergleich
Detaillierter Direktvergleich von MRFE6S9160HSR3 von NXP Semiconductors und MRF6S9160HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | MRFE6S9160HSR3 | MRF6S9160HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Letzte Kaufgelegenheit |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $55,20 | $92,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRFE6S9160HSR3 | — |
| Transistortyp | LDMOS, N-Channel, Enhancement-Mode, Lateral | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (VDSS) | 66 V (rated) | — |
| Drain-Source-Durchbruchspannung | [DATA_NEEDED: V(BR)DSS minimum] | — |
| Operating Drain Voltage (VDD) | 28 V (typical bias) | — |
| Continuous Drain Current (ID) | 10 uA [leakage spec context, ID max [DATA_NEEDED]] | — |
| Quiescent Current (IDQ) | 1200 mA | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Output Power (Pout) Avg. | 35 W (under N-CDMA drive, 9.8 dB PAR) | — |
| Output Power Peak | 160 W (peak envelope) | — |
| Power Gain | 21 dB (typical at 880 MHz) | 20.9 dB typical at 880 MHz |
| Drain Efficiency | 31% (typical at 35 W avg.) | 31% typical at 880 MHz |
| ACPR at 750 kHz Offset | -46.8 dBc | — |
| Gehäuse | NI-780S (NI780HS) ceramic, bolted flange | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount |
| Montageart | Through-hole / chassis mount with flange | Flange / Chassis Mount with screw holes |
| RoHS-Status | [DATA_NEEDED: confirm via latest distributor listing] | — |
| Technology | HV6E (6th gen high-voltage LDMOS) | — |
| Application | — | RF Power Amplifier |
| Operating Frequency | — | 865 MHz to 960 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 68 V |
| Operating Voltage (VDD) | — | 28 V |
| Test Bias Current (IDQ) | — | 1.2 A |
| Output Power (Pout, Avg.) | — | 35 W Avg. |
| ACPR @ 750 kHz Offset | — | -46.8 dBc (N-CDMA) |
| Lead-Free Status | — | Lead free (HSR3 suffix) |
| Designed Waveforms | — | N-CDMA, GSM, GSM EDGE, multicarrier |