MT40A1G8AG-062E vs H5AN8G8NCJR-VKI Vergleich
Detaillierter Direktvergleich von MT40A1G8AG-062E von Micron Technology und H5AN8G8NCJR-VKI von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MT40A1G8AG-062E | H5AN8G8NCJR-VKI |
|---|---|---|
| Marke | Micron Technology | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,10 | $4,85 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Speichergröße | 8 Gbit | 8 Gb |
| Speicherorganisation | 1G x 8 | — |
| Schnittstelle | Parallel | Parallel |
| Clock Frequency | 1.6 GHz (DDR4-3200, 3200 MT/s data rate) | — |
| Clock Cycle Time | 19 ns class (-062E speed grade) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Gehäuse | 78-FBGA (7.5 x 11 mm) | FBGA-78 |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Temperature Grade | Automotive (AUT) | — |
| Access Time (CAS Latency class) | DDR4-3200 timing class (tAA per datasheet) | — |
| Bank Group Architecture | Yes (DDR4 bank groups) | — |
| Termination | On-Die Termination (ODT) | — |
| CA Parity | Supported (DDR4 command/address parity) | — |
| Packaging Option | Tape and Reel (TR / :R suffix) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Refresh Rate | [DATA_NEEDED: refresh rate] | — |
| Memory Organization | — | 1G x8 |
| Datenrate | — | 2666 Mbps |
| Versorgungsspannung | — | 1.2 V |
| Memory Format | — | DRAM |
| Volatile | — | Yes |
| Grade | — | Industrial (I suffix) |
| Betriebstemperatur | — | [DATA_NEEDED: Operating Temperature] |
| Technology | — | CMOS |
| Product Family | — | H5AN8G8NCJR-xxC/xI DDR4 SDRAM |
| Packaging | — | Tray |
| Product Status | — | Active |