MT47H64M16NF-25E vs MT47H32M16NF-25E:H Vergleich
Detaillierter Direktvergleich von MT47H64M16NF-25E von Micron Technology und MT47H32M16NF-25E:H von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT47H32M16NF-25E:H - 512Mb DDR2 SDRAM 400MHz FBGA-84 | Micron
MT47H32M16NF-25E:H ✓ AktivSpezifikationsvergleich
| Parameter | MT47H64M16NF-25E | MT47H32M16NF-25E:H |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,65 | $7,73 |
| Speichertyp | DDR2 SDRAM | DDR2 SDRAM |
| Speichergröße | 1 Gbit | — |
| Speicherorganisation | 64M x 16 | 32M x 16 |
| Memory Interface | Parallel | — |
| Clock Frequency | 400 MHz | 400 MHz |
| Datenrate | DDR2-800 (400 ps) | — |
| Speed Grade | -25E | -25E |
| Number of Banks | 8 banks | — |
| Prefetch Architecture | 4n-bit | — |
| VDD Supply Voltage | 1.8 V +/-0.1 V | — |
| VDDQ Supply Voltage | 1.8 V +/-0.1 V | — |
| I/O Interface Standard | SSTL_18-compatible (JEDEC 1.8V) | — |
| Eigenschaften | Differential DQS, RDQS duplicate output strobe, DM data mask, auto precharge, dynamic ODT | — |
| Betriebstemperatur | -40C to +95C (IT: industrial) | — |
| Gehäuse | 84-FBGA (8 mm x 12.5 mm) | 84-FBGA (8 x 12.5 mm) |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Part Status | Production | — |
| Density | — | 512 Mbit |
| Output Jitter | — | 400 ps |
| Versorgungsspannung | — | 1.8 V |
| Schnittstelle | — | Parallel |
| Operating Temperature (commercial :H variant) | — | [DATA_NEEDED: operating temperature range] |
| Operating Temperature (IT variant) | — | -40C to +95C |
| On-Die Termination (ODT) | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask Function | — | Yes |
| RoHS-Status | — | Compliant (:H lead-free suffix) |
| FBGA Code | — | D9SBV |