MW7IC2040NBR1 vs MD7IC2050NR1 Vergleich
Detaillierter Direktvergleich von MW7IC2040NBR1 von NXP Semiconductors und MD7IC2050NR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MW7IC2040NBR1 - 4W RF LDMOS Wideband Power Amplifier | NXP Semiconductors
MW7IC2040NBR1 ✓ AktivSpezifikationsvergleich
| Parameter | MW7IC2040NBR1 | MD7IC2050NR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Amplifiers | RF Amplifiers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $15,20 | $21,95 |
| RF Type | General Purpose | — |
| Frequency Range | 1930 MHz to 1990 MHz (PCS) / 1805 MHz to 1880 MHz (DCS) | — |
| Test Frequency | 1990 MHz | — |
| Gain | 23.5 dB (typ at 1990 MHz) | — |
| Output Power (P1dB/avg) | 4 W (family rating) | — |
| Versorgungsspannung | 24 V to 32 V | — |
| Quiescent Supply Current | 75 mA (typ) | 230 mA |
| Gehäuse / Bauform | TO-272-16 Variant, Flat Leads | TO-270-14 Variant, Flat Leads (TO-270 WB-14) |
| Montageart | Surface Mount | Surface Mount |
| Technology | RF LDMOS (later-generation, on-chip matching) | — |
| Number of Functions | 1 (multi-stage integrated PA) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Modulation Support | W-CDMA, GSM, EDGE, CW | — |
| RoHS-Status | Compliant (per ETEI / distributor data) | [DATA_NEEDED: current RoHS status] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MD7IC2050NR1 |
| Device Type | — | RF LDMOS Integrated Power Amplifier |
| RF Type / Modulation | — | W-CDMA / 3GPP |
| Frequency Range (datasheet typical) | — | 1.88 GHz to 2.1 GHz |
| Frequency Range (broadband match) | — | 1.75 GHz to 2.05 GHz |
| Output Power (Average, W-CDMA) | — | 10 W |
| Supply Voltage (Vdd) | — | 28 V |
| Supply Voltage Range | — | 26 V to 32 V |
| Power Gain (Gp) | — | 30.5 dB at 2.14 GHz |
| Architecture | — | Two-stage, on-chip matched |
| Maximum Input Power (CW) | — | 28 dBm |
| Packaging | — | Tape & Reel |