MX30LF1GE8AB-TI-TR vs MT29F1G08ABAEAWP-IT:E Vergleich
Detaillierter Direktvergleich von MX30LF1GE8AB-TI-TR von Macronix und MT29F1G08ABAEAWP-IT:E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Macronix
MX30LF1GE8AB-TI-TR - 1Gbit 3V SLC NAND Flash, x8, TSOP-48 | Macronix
MX30LF1GE8AB-TI-TR ✓ AktivMicron Technology
MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron
MT29F1G08ABAEAWP-IT:E ✓ AktivSpezifikationsvergleich
| Parameter | MX30LF1GE8AB-TI-TR | MT29F1G08ABAEAWP-IT:E |
|---|---|---|
| Marke | Macronix | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,89 | $1,60 |
| Speichertyp | Non-Volatile NAND Flash (SLC) | — |
| Memory Organization | 128 M x 8 | — |
| Density | 1 Gbit (1024 Mbit) | — |
| Schnittstellentyp | Parallel Asynchronous (ONFI 1.0) | — |
| Cell Technology | Single-Level Cell (SLC) | — |
| Page Size | 2112 bytes (2048 data + 64 spare) | 2048 bytes + 64 bytes spare |
| Block Size | 64 pages (128 KB + 4 KB spare) | 128 KB |
| Number of Blocks | 1024 | — |
| Access Time (tR) | 20 ns / 25 ns (grade dependent) | — |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | — |
| Active Read Current (ICC1) | 15 mA typical | — |
| Program / Erase Current (ICC2) | 15 mA typical | — |
| Program / Erase Endurance | 100 K cycles per block (typical) | — |
| Data Retention | 10 years (typical) | 10 years |
| Betriebstemperatur | -40 C to +85 C (industrial) | -40C to +85C |
| Gehäuse | 48-pin TSOP-I (Type I) | TSOP-48 |
| Montageart | Surface Mount | Surface Mount |
| ECC Architecture | ECC-Free (external host ECC required) | — |
| Compliance Standard | ONFI 1.0 | — |
| Bad Block Mark | 00h on 1st and 2nd page (per datasheet v1.3) | — |
| RoHS-Status | Compliant | Compliant |
| Bad Block Indicator | Marked at 1st and 2nd page (00h) per datasheet v1.3 | — |
| R/B# Power-On Delay | 100 us (per datasheet v1.3) | — |
| Speichergröße | — | 1 Gbit (128 MB) |
| Speicherorganisation | — | 128M x 8 |
| Schnittstelle | — | Parallel |
| Versorgungsspannung | — | 3.3 V |
| Access Time | — | 25 ns |
| Program Time | — | 200 us (typical) |
| Erase Time | — | 2 ms (typical) |
| Endurance | — | 100K program/erase cycles |