N25Q512A83GSFA0F vs N25Q512A83G12A0F Vergleich
Detaillierter Direktvergleich von N25Q512A83GSFA0F von Micron Technology und N25Q512A83G12A0F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | N25Q512A83GSFA0F | N25Q512A83G12A0F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $5,20 |
| Speichertyp | FLASH - NOR (Serial SPI) | Flash - NOR Memory IC |
| Speichergröße | 512Mb (128M x 4) | — |
| Technology | SLC NOR Flash | — |
| Schnittstelle | SPI - Multiple I/O | SPI - Multiple I/O (Standard/Dual/Quad) |
| Max Clock Frequency | 108 MHz | — |
| Versorgungsspannung | 2.7 V to 3.6 V | 2.7 V to 3.6 V (3V class) |
| Write Cycle Time - Word, Page | 8 ms, 5 ms | — |
| Sector Erase Size | 4 KB | 4 KB |
| Betriebstemperatur | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | 16-SO (SOIC DDP) | 24-T-PBGA (6x8 mm) |
| Montageart | Surface Mount | Surface Mount |
| Memory Format | FLASH | — |
| Speicherorganisation | 128M x 4 | 128M x 4 |
| Non-Volatile Category | Non-Volatile Memory | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Package Body Size | [DATA_NEEDED: package body dimensions] | — |
| Memory Capacity | — | 512 Mbit (64 MB) |
| Clock Frequency | — | 108 MHz |
| Cell Type | — | SLC |
| Package Structure | — | Dual-Die Package (DDP) |
| Program/Erase Protection | — | Software and hardware write protection |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read current] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |