NE5532D8R2G vs NE5532AD8G Vergleich

Detaillierter Direktvergleich von NE5532D8R2G von onsemi und NE5532AD8G von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter NE5532D8R2G NE5532AD8G
Marke onsemi onsemi
Kategorie Amplifier ICs Amplifier ICs
Lebenszyklusstatus Aktiv Aktiv
Product Type Dual operational amplifier —
Amplifier Circuit Count 2 circuits —
Gain-Bandwidth Product 10 MHz 10 MHz
Supply Voltage Range 3 V to 20 V ±3 V to ±20 V
Compensation Internally compensated Internal
Noise Class Low noise —
Application Classification Standard general-purpose amplifier —
Temperature Grade Commercial temperature —
Gehäuse 8-SOIC 8-pin SOIC
Montageart Surface mount Surface mount
Number of Circuits 2 —
Input Offset Voltage [DATA_NEEDED: input offset voltage] 500 µV
Input Bias Current [DATA_NEEDED: input bias current] 200 nA
Voltage Noise Density [DATA_NEEDED: voltage noise density] —
Slew Rate [DATA_NEEDED: slew rate] 9 V/µs
Output Current [DATA_NEEDED: output current] —
Unity-Gain Bandwidth [DATA_NEEDED: unity-gain bandwidth] —
Betriebstemperaturbereich [DATA_NEEDED: operating temperature range] —
RoHS-Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
REACH Status [DATA_NEEDED: REACH status] [DATA_NEEDED: REACH status]
AEC-Q100 Qualification [DATA_NEEDED: AEC-Q100 qualification] [DATA_NEEDED: AEC-Q100 qualification]
Number of Amplifier Circuits — 2 circuits
Amplifier Type — Internally compensated dual low-noise operational amplifier
Versorgungsstrom — 8 mA
Output Drive — Improved output-drive capability
Small-Signal Bandwidth — 10 MHz gain-bandwidth product
Betriebstemperatur — Commercial temperature
Product Status — Active
Lead-Free Status — [DATA_NEEDED: lead-free status]

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