OPA2277UA vs LT1012CD Vergleich
Detaillierter Direktvergleich von OPA2277UA von Texas Instruments und LT1012CD von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Texas Instruments
LT1012CD - Precision Op Amp, 25µV Offset, 8-SOIC | Texas Instruments
LT1012CD ✓ AktivSpezifikationsvergleich
| Parameter | OPA2277UA | LT1012CD |
|---|---|---|
| Marke | Texas Instruments | Texas Instruments |
| Kategorie | Amplifier ICs | Amplifier ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Number of Channels | 2 (Dual) | — |
| Amplifier Type | Precision Operational Amplifier | Precision Operational Amplifier |
| Input Offset Voltage (max) | 10 µV | — |
| Offset Drift (typ) | ±0.1 µV/°C | — |
| Open-Loop Gain (min) | 134 dB | — |
| Common-Mode Rejection (min) | 140 dB | — |
| Power-Supply Rejection (min) | 130 dB | — |
| Quiescent Current per Channel (typ) | 800 µA | — |
| Supply Voltage Range | ±2 V to ±18 V | ±2 V to ±20 V (typical dual supply) |
| Supply Voltage (Single) | 4 V to 36 V | — |
| Gain-Bandwidth Product | 1 MHz | — |
| Slew Rate | 2 V/µs | 0.2 V/µs typical |
| Output Swing (RL=2 kΩ, ±15V) | ±14 V (within 1 V of rails) | — |
| Betriebstemperaturbereich | -40°C to +125°C | -40°C to +85°C (commercial grade) |
| Gehäuse | 8-pin SOIC (D) | 8-SOIC (0.154", 3.90 mm width) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 3 (168 hours) | [DATA_NEEDED: MSL level] |
| RoHS-Status | Compliant | [DATA_NEEDED: rohs status] |
| Manufacturer | — | Texas Instruments (originally Linear Technology) |
| Number of Circuits | — | 1 |
| Input Offset Voltage (Vos) | — | 25 µV typical, 200 µV maximum |
| Input Bias Current (Ib) | — | 40 pA maximum |
| Voltage Gain (Aol) | — | 1,000,000 (1M) minimum |
| Output Current | — | 5 mA (with voltage gain of 1M) |
| Common-Mode Rejection Ratio (CMRR) | — | Extremely high (per datasheet) |
| Power Supply Rejection Ratio (PSRR) | — | Extremely high (per datasheet) |
| Compensation | — | Internally compensated |
| Power Dissipation (Ni-Cad operation) | — | 1 mW |