PVG612AS-TPBF vs PVT412PBF Vergleich
Detaillierter Direktvergleich von PVG612AS-TPBF von Infineon und PVT412PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | PVG612AS-TPBF | PVT412PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Relays | Voltage Regulators |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,35 | $2,95 |
| Relay Type | Solid State Photo-Coupled Relay (PhotoVoltaic / PhotoMOS) | Solid State Photo-Voltaic Relay (Photorelay) |
| Contact Configuration | SPST-NO (1 Form A) | SPST-NO (1 Form A) |
| Load Voltage (Max) | 60 V (AC / DC) | — |
| Load Current (Continuous) | 2 A | — |
| On-State Resistance (Max) | 0.1 ohm (RDS(on)) | — |
| Input-to-Output Isolation Voltage | 4000 Vrms | — |
| LED Forward Current (Typical) | 25 mA | — |
| Off-State Leakage | 1 uA (typical at rated Vload) | [DATA_NEEDED: max off-state leakage current] |
| Turn-On Time (Typical) | 1 ms (estimated from datasheet family) | — |
| Turn-Off Time (Typical) | 0.5 ms (estimated from datasheet family) | — |
| Output Switch Technology | HEXFET Power MOSFET (Infineon / IR proprietary) | — |
| Input Drive | GaAlAs LED + integrated photovoltaic generator | — |
| Gehäuse | 6-SMD (0.300 inch / 7.62 mm pitch) | 6-DIP (0.300 inch / 7.62 mm) through-hole |
| Montageart | Surface Mount (Tape & Reel) | Through-Hole |
| RoHS-Status | Compliant (Pb-Free) | Compliant (Pb-Free suffix) |
| Betriebstemperatur | -40C to +85C (typical industrial SSR range) | — |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| Load Voltage Range | — | 0 V to 400 V |
| On-State Current (AC) | — | 140 mA |
| On-State Current (DC) | — | 210 mA |
| On-Resistance (RDS(on)) | — | 35 ohm typical at full conduction [DATA_NEEDED: exact test conditions] |
| Input LED Current (typical) | — | 5 mA |
| Input LED Current (max) | — | 10 mA |
| Isolation Voltage (Input to Output) | — | 5 kV |
| Output MOSFET Topology | — | Bidirectional back-to-back N-channel HEXFET |
| Betriebstemperaturbereich | — | [DATA_NEEDED: exact min/max operating temperature] |