PVT312LSPBF vs PVT312S-TPBF Vergleich
Detaillierter Direktvergleich von PVT312LSPBF von Infineon und PVT312S-TPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | PVT312LSPBF | PVT312S-TPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Relays | Relays |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,85 | $3,85 |
| Relay Type | Solid State Photo-Coupled Relay (Photorelay), SPST-NO (1 Form A) | — |
| Ausgangskonfiguration | SPST-NO (1 Form A) | — |
| Load Voltage Rating (AC/DC) | 0 V to 250 V | — |
| Continuous Load Current (AC, 25 C) | 190 mA | — |
| Continuous Load Current (DC, 25 C) | 320 mA | — |
| On-Resistance (Max, 25 C) | 0.5 ohm | — |
| Input Control Current (Typ, turn-on) | 5 mA | — |
| Input Turn-Off Current (Max) | 0.25 mA | — |
| LED Forward Voltage (Typ, 5 mA) | 1.2 V | — |
| LED Reverse Voltage (Max) | 6 V | — |
| Turn-On Time (Max) | 2 ms | — |
| Turn-Off Time (Max) | 0.25 ms | — |
| Input-to-Output Isolation (Min) | 3750 Vrms | — |
| Capacitance Input-to-Output (Typ) | 1.0 pF | — |
| Betriebstemperaturbereich | -40 C to +85 C | -40 C to +85 C |
| Gehäuse | 6-SMD (0.300 inch / 7.62 mm DIP pitch) | 6-SMD (0.300", 7.62 mm) PDIP SMT |
| Montageart | Surface Mount (SMD) | — |
| RoHS-Status | Compliant (Pb-free suffix 'PbF') | ROHS3 Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Load Voltage Max | — | 250 V |
| Load Current (AC, continuous) | — | 190 mA |
| Load Current (DC, continuous) | — | 320 mA |
| On-State Resistance Max (RON) | — | 10 ohm |
| Contact Configuration | — | SPST-NO (1 Form A) |
| Isolation Voltage (Input to Output) | — | 4 kV |
| Forward Current IF Max | — | 25 mA |
| LED Trigger Current (typ) | — | 5 mA |
| Relay Terminals | — | SMD (Surface Mount) |
| Turn-On Time (typ) | — | 5 ms |
| Turn-Off Time (typ) | — | 0.5 ms |
| Output Switch Technology | — | HEXFET Power MOSFET (photovoltaic driven) |