RTAX1000SL-1CGS624V vs RTAX1000S-1LG624V Vergleich

Detaillierter Direktvergleich von RTAX1000SL-1CGS624V von Microchip Technology und RTAX1000S-1LG624V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
RTAX1000SL-1CGS624V RTAX1000SL-1CGS624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000SL-1CGS624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000SL-1CGS624V ✓ Aktiv
Microchip Technology
RTAX1000S-1LG624V RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-1LG624V ✓ Aktiv

Spezifikationsvergleich

Parameter RTAX1000SL-1CGS624V RTAX1000S-1LG624V
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,00 $3.600,00
System Gates 1,000,000 (1.00E6) —
Logic Cells / Logic Blocks 12096 —
Logic Family Digital CMOS —
Programmable Technology Antifuse (one-time programmable) —
Package Type CGA-624 (ceramic column grid array) —
Pin-Anzahl 624 —
Betriebstemperatur -55C to +125C [DATA_NEEDED: operating temperature range]
Speed Grade -1 (standard) -1
SEU Immunity SEU-hardened registers; SEU rate < 10-10 errors/bit-day —
Radiation Tolerance Radiation-tolerant (space-flight qualified family) —
Configuration Live at power-up, single chip, no external boot PROM Nonvolatile, live at power-up, single chip
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits SRAM with optional EDAC
Clocking Segmentable clock resources —
Routing Features Chip-wide highway routing, carry logic —
Montageart Surface Mount Surface Mount
RoHS-Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Versorgungsspannung [DATA_NEEDED: core/IO supply voltage] —
Equivalent System Gates — 1000000
Logic Cells — 18144
CLBs — 12096
Maximum User I/Os — 418
Technology — CMOS antifuse (one-time programmable)
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parametric) — 200 krad (Si)
SEU Rate — Less than 1E-10 errors per bit-day
Combinatorial Delay (max) — 0.93 ns
Gehäuse — LG624 (624-ball ceramic column grid array)
Radiation Tolerance Class — Rad-tolerant (space flight)
Architecture Family — RTAX-S (based on Axcelerator)
Screening — [DATA_NEEDED: screening flow per order code suffix]
Supply Voltage (Core) — [DATA_NEEDED: core supply voltage]

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