RTAX1000SL-LG624V vs RTAX1000S-1LG624V Vergleich
Detaillierter Direktvergleich von RTAX1000SL-LG624V von Microchip Technology und RTAX1000S-1LG624V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX1000SL-LG624V - Rad-Tolerant FPGA, 1M Gates | Microchip
RTAX1000SL-LG624V ✓ AktivMicrochip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ AktivSpezifikationsvergleich
| Parameter | RTAX1000SL-LG624V | RTAX1000S-1LG624V |
|---|---|---|
| Marke | Microchip Technology | Microchip Technology |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2.025,00 | $3.600,00 |
| Equivalent System Gates | 1,000,000 gates | 1000000 |
| Configurable Logic Blocks (CLBs) | 12096 | — |
| Logic Cells | 18144 | 18144 |
| Technology | CMOS antifuse | CMOS antifuse (one-time programmable) |
| Radiation Tolerance | Radiation-tolerant (space-flight grade) | — |
| Betriebstemperaturbereich | -55C to +125C | — |
| Gehäuse | 624-terminal ceramic CGA (LG624) | LG624 (624-ball ceramic column grid array) |
| Montageart | Surface Mount | Surface Mount |
| Configuration Type | One-time programmable antifuse (live at power-up) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC |
| Clocking | Segmentable clocks, chip-wide highway routing | — |
| Arithmetic Support | Dedicated carry logic | — |
| Speed Grade (this MPN) | Standard (L) | — |
| CLB Combinatorial Delay (speed grade 1 variant) | 0.93 ns max | — |
| Series | RTAX-S/SL (RTAX1000SL) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Versorgungsspannung | [DATA_NEEDED: core supply voltage] | — |
| CLBs | — | 12096 |
| Maximum User I/Os | — | 418 |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Combinatorial Delay (max) | — | 0.93 ns |
| Speed Grade | — | -1 |
| Configuration | — | Nonvolatile, live at power-up, single chip |
| Radiation Tolerance Class | — | Rad-tolerant (space flight) |
| Architecture Family | — | RTAX-S (based on Axcelerator) |
| Screening | — | [DATA_NEEDED: screening flow per order code suffix] |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |
| Betriebstemperatur | — | [DATA_NEEDED: operating temperature range] |