RTAX2000D-CQ352E vs RTAX2000DL-CQ352B Vergleich

Detaillierter Direktvergleich von RTAX2000D-CQ352E von Microchip Technology und RTAX2000DL-CQ352B von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
RTAX2000D-CQ352E RTAX2000D-CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip

RTAX2000D-CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip

RTAX2000D-CQ352E ✓ Aktiv
Microchip Technology
RTAX2000DL-CQ352B RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-CQ352B ✓ Aktiv

Spezifikationsvergleich

Parameter RTAX2000D-CQ352E RTAX2000DL-CQ352B
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $0,00
Family RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs —
Equivalent System Gates 2000000 gates 2,000,000
Logic Cells 29568 cells [DATA_NEEDED: Logic Cells]
CLB Organization 19712 CLBs —
Maximale Taktfrequenz 649 MHz —
Number of Inputs 166 —
Anzahl der Ausgänge 166 —
Technology Digital CMOS, antifuse programmable —
Gehäuse CQFP-352 (352-terminal ceramic quad flat pack) 352-terminal ceramic CQFP, metal-sealed
Montageart Surface Mount Surface Mount
Screening MIL-STD-883 Class (per distributor data) —
Program Type One-time programmable (antifuse) —
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits with optional EDAC protection
System Features Segmentable clocks, chip-wide highway routing, carry logic —
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature Range]
Versorgungsspannung [DATA_NEEDED: core supply voltage] —
Radiation Tolerance (TID) [DATA_NEEDED: total ionizing dose rating] —
RoHS-Status [DATA_NEEDED: RoHS status] —
CLBs — 19,712
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz, 18-bit x 18-bit multiply-accumulate
Programming Technology — Nonvolatile antifuse
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parameter) — 200 krad (Si)
Core Supply Voltage (Nominal) — 1.5 V
Core Supply Voltage Range — 1.425 V to 1.575 V
Terminal Pitch — 0.500 mm
Configuration — Live at power-up, no external boot PROM required
Application Domain — Space flight systems

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