RTAX2000DL-1CQ352V vs RTAX2000DL-CQ352B Vergleich
Detaillierter Direktvergleich von RTAX2000DL-1CQ352V von Microchip Technology und RTAX2000DL-CQ352B von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352V ✓ AktivMicrochip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ AktivSpezifikationsvergleich
| Parameter | RTAX2000DL-1CQ352V | RTAX2000DL-CQ352B |
|---|---|---|
| Marke | Microchip Technology | Microchip Technology |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2.950,00 | $0,00 |
| Family | RTAX-DSP (RTAX2000DL) | — |
| Equivalent System Gates | 2,000,000 (approx.) | 2,000,000 |
| Logic Cells | 29,568 | [DATA_NEEDED: Logic Cells] |
| CLBs | 19,712 | 19,712 |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | — |
| Technology | Digital CMOS | — |
| Programming Technology | Antifuse (one-time programmable) | Nonvolatile antifuse |
| Radiation Tolerance | Radiation-tolerant (RTAX-DSP) | — |
| Configuration | Live at power-up, no external boot memory | Live at power-up, no external boot PROM required |
| Speed Grade | -1 | — |
| Gehäuse | CQ352 (352-pin ceramic QFP) | 352-terminal ceramic CQFP, metal-sealed |
| Montageart | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | Space flight systems |
| Special Features | DSP multiply-accumulate blocks (DL variant) | — |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | — |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: Operating Temperature Range] |
| Embedded SRAM | [DATA_NEEDED: Embedded SRAM capacity] | — |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | — | Up to 540 kbits with optional EDAC protection |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Terminal Pitch | — | 0.500 mm |