RTAX2000S-1CG1152V vs RTAX2000SL-LG1152V Vergleich

Detaillierter Direktvergleich von RTAX2000S-1CG1152V von Microchip Technology und RTAX2000SL-LG1152V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
RTAX2000S-1CG1152V RTAX2000S-1CG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CG1152V ✓ Aktiv
Microchip Technology
RTAX2000SL-LG1152V RTAX2000SL-LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-LG1152V ✓ Aktiv

Spezifikationsvergleich

Parameter RTAX2000S-1CG1152V RTAX2000SL-LG1152V
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $2.440,00
Family RTAX-S / RTAX2000S RTAX-S/SL RadTolerant FPGAs
Equivalent System Gates 2,000,000 gates 2000000 gates
CLBs 21,504 —
Logic Cells 32,256 32256
Usable I/O 684 inputs / 684 outputs —
Gehäuse 1152-terminal Ceramic, Metal-Sealed Cofired CBGA (CGA1152) 1152-pin ceramic column grid array (CG1152)
Technology 0.15 um CMOS, antifuse OTP Digital CMOS antifuse (nonvolatile)
Core Voltage 1.5 V —
Speed Grade -1 —
Radiation Tolerance Radiation-tolerant (TID/SEE rated, see datasheet) —
Configuration Live at power-up, single-chip antifuse One-time programmable antifuse, live at power-up
Embedded SRAM Yes, with built-in FIFO control logic —
Embedded Clocking Segmentable clocks, chip-wide features —
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Max I/O Frequency [DATA_NEEDED: maximum I/O frequency] —
Moisture Sensitivity Level [DATA_NEEDED: MSL level] —
Configurable Logic Blocks (CLBs) — 21504
User I/Os — Up to 684 (package dependent)
Embedded Memory — Up to 540 kbits SRAM with optional EDAC
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parametric) — 200 krad (Si)
SEU Rate — Less than 1E-10 errors per bit-day
Montageart — Surface Mount
Radiation Environment — Space-flight (rad-tolerant)
Derivative Family Base — Microsemi Axcelerator commercial FPGA family
RoHS-Status — [DATA_NEEDED: RoHS status]

Datenblätter & Ressourcen

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