RTAX2000S-1CG624PROTO vs RTAX2000S-1LG624V Vergleich

Detaillierter Direktvergleich von RTAX2000S-1CG624PROTO von Microchip Technology und RTAX2000S-1LG624V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
RTAX2000S-1CG624PROTO RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CG624PROTO ✓ Aktiv
Microchip Technology
RTAX2000S-1LG624V RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip

RTAX2000S-1LG624V ✓ Aktiv

Spezifikationsvergleich

Parameter RTAX2000S-1CG624PROTO RTAX2000S-1LG624V
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $0,00
Equivalent System Gates 2000000 2,000,000 gates
Logic Cells 32256 —
Configurable Logic Blocks (CLBs) 21504 21,504
Embedded Memory 540 kbits (family max, with optional EDAC) Up to 540 kbits SRAM with optional EDAC protection
User I/Os (family max) 684 —
Total Ionizing Dose (functional) 300 krad (Si) —
Total Ionizing Dose (parametric) 200 krad (Si) —
SEU Rate Less than 1E-10 errors per bit-day —
Maximum System Frequency 350 MHz (family performance) —
Technology CMOS antifuse (one-time programmable) —
Speed Grade -1 -1
Gehäuse CCGA-624 (CG624 ceramic column grid array) CG624, 624-pin ceramic column grid array
Configuration Live at power-up (nonvolatile antifuse) Single-chip, live at power-up (no boot device required)
Qualification Flow PROTO (engineering prototype) —
Montageart Surface Mount Surface Mount
Family RTAX-S/SL Radiation-Tolerant FPGA —
RoHS-Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Betriebstemperatur [DATA_NEEDED: operating temperature range] —
User I/Os (maximum, family) — Up to 684
Total Ionizing Dose (TID), functional — 300 krad (Si)
Total Ionizing Dose (TID), parametric — 200 krad (Si)
SEU Immunity — Less than 1E-10 errors per bit-day
Programming Technology — One-time programmable antifuse, nonvolatile
Process Technology — Digital CMOS
Package Temperature Suffix — V (space/military screening variant)
Family Lineage — RTAX-S/SL, based on commercial Axcelerator family
Betriebstemperaturbereich — [DATA_NEEDED: operating temperature range]
Core Supply Voltage — [DATA_NEEDED: core supply voltage]

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