RTAX2000S-1CGS624EV vs RTAX2000SL-CGS624V Vergleich

Detaillierter Direktvergleich von RTAX2000S-1CGS624EV von Microchip Technology und RTAX2000SL-CGS624V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
RTAX2000S-1CGS624EV RTAX2000S-1CGS624EV - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CGS624EV - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CGS624EV ✓ Aktiv
Microchip Technology
RTAX2000SL-CGS624V RTAX2000SL-CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-CGS624V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000SL-CGS624V ✓ Aktiv

Spezifikationsvergleich

Parameter RTAX2000S-1CGS624EV RTAX2000SL-CGS624V
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $3.600,00 $6.500,00
System Gates 2,000,000 —
Logic Cells (CLBs) 21504 21504
Total Cells 32256 —
Additional ASIC Equivalent Gates 250000 —
Gehäuse 624-pin Ceramic Column Grid Array (CGA-624 / CCGA624) CG624 ceramic package
Core Supply Voltage 1.5 V nominal (1.425 V to 1.575 V) [DATA_NEEDED: core supply voltage]
Betriebstemperatur -55C to +125C [DATA_NEEDED: operating temperature range]
Process Technology 0.15 um CMOS —
Maximum Frequency 649 MHz —
Logic Family CMOS —
SEU Immunity SEU-hardened registers, immune to single-event upsets to specified LET threshold —
SEU Rate < 10-10 errors/bit-day —
Configuration One-time programmable anti-fuse, live at power-up, single chip One-time programmable antifuse, live at power-up
Embedded Memory Embedded SRAM with built-in FIFO control logic 540 kbits with optional EDAC protection
Montageart Surface Mount —
Product Family RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs —
Thermal Resistance Basis JEDEC JESD51 simulation conditions (per datasheet) —
I/O Supply Voltage [DATA_NEEDED: I/O bank voltage] [DATA_NEEDED: I/O supply voltage]
Maximum User I/O [DATA_NEEDED: user I/O count] —
RoHS-Status [DATA_NEEDED: RoHS status] —
Equivalent System Gates — 2000000
Technology — CMOS antifuse (nonvolatile)
User I/Os (maximum) — 684
Total Ionizing Dose (TID) — 300 krad (Si) functional / 200 krad (Si) parametric
Single-Event Upset Rate — Less than 1E-10 errors per bit-day
Embedded SRAM Features — Built-in FIFO control logic
Clock Architecture — Segmentable clock structures
Routing — Chip-wide highway routing, carry logic
Family — RTAX-S/SL Radiation-Tolerant FPGA
Application Domain — Space-flight systems
Speed Grade — [DATA_NEEDED: speed grade]
System Frequency (typical) — [DATA_NEEDED: system frequency]

Datenblätter & Ressourcen

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