RTAX2000S-LG1152V vs RTAX2000SL-LG1152V Vergleich
Detaillierter Direktvergleich von RTAX2000S-LG1152V von Microsemi und RTAX2000SL-LG1152V von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX2000SL-LG1152V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-LG1152V ✓ AktivSpezifikationsvergleich
| Parameter | RTAX2000S-LG1152V | RTAX2000SL-LG1152V |
|---|---|---|
| Marke | Microsemi | Microchip Technology |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9.750,00 | $2.440,00 |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | RTAX-S/SL RadTolerant FPGAs |
| Equivalent System Gates | 2000000 | 2000000 gates |
| Logic Cells | 32256 | 32256 |
| CLBs | 21504 | — |
| Technology | Digital CMOS, antifuse (one-time programmable) | Digital CMOS antifuse (nonvolatile) |
| Base Architecture | Microsemi commercial Axcelerator family | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC |
| Clocking | Segmentable clocks | — |
| Routing | Chip-wide highway routing and carry logic | — |
| Power-Up Behavior | Live at power-up (no external configuration device) | — |
| Radiation Tolerance | Radiation-tolerant for space-flight systems | — |
| Gehäuse | LG1152 (1152-pin ceramic column grid array) | 1152-pin ceramic column grid array (CG1152) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Core Supply Voltage | [DATA_NEEDED: Core Supply Voltage] | — |
| Max User I/O | [DATA_NEEDED: Max User I/O count] | — |
| MSL-Level | [DATA_NEEDED: MSL Level] | — |
| Configurable Logic Blocks (CLBs) | — | 21504 |
| User I/Os | — | Up to 684 (package dependent) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Configuration | — | One-time programmable antifuse, live at power-up |
| Radiation Environment | — | Space-flight (rad-tolerant) |
| Derivative Family Base | — | Microsemi Axcelerator commercial FPGA family |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |