RTAX4000SL-1CQ352E vs RTAX2000DL-CQ352B Vergleich
Detaillierter Direktvergleich von RTAX4000SL-1CQ352E von Microchip Technology und RTAX2000DL-CQ352B von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Microchip Technology
RTAX4000SL-1CQ352E - 4M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip
RTAX4000SL-1CQ352E ✓ AktivMicrochip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ AktivSpezifikationsvergleich
| Parameter | RTAX4000SL-1CQ352E | RTAX2000DL-CQ352B |
|---|---|---|
| Marke | Microchip Technology | Microchip Technology |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3.840,00 | $0,00 |
| Family | RTAX-SL Radiation-Tolerant FPGA | — |
| Equivalent Gates | 4,000,000 | — |
| Logic Cells | 60,480 | [DATA_NEEDED: Logic Cells] |
| CLBs | 40,320 | 19,712 |
| Process Technology | 0.15 um CMOS | — |
| Core Supply Voltage | 1.5 V | — |
| Gehäuse | 352-pin CQFP, 0.500 mm terminal pitch | 352-terminal ceramic CQFP, metal-sealed |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +125C (extended) | [DATA_NEEDED: Operating Temperature Range] |
| Programmability | Antifuse, one-time programmable, live at power-up | — |
| Radiation Tolerance | Radiation-tolerant (space flight qualified family) | — |
| Packaging | Box | — |
| Kategorie | Programmable Logic Devices - FPGA | — |
| I/O Standard Support | [DATA_NEEDED: I/O standard list] | — |
| Embedded Memory | [DATA_NEEDED: embedded SRAM block capacity] | Up to 540 kbits with optional EDAC protection |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| Equivalent System Gates | — | 2,000,000 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Programming Technology | — | Nonvolatile antifuse |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Terminal Pitch | — | 0.500 mm |
| Configuration | — | Live at power-up, no external boot PROM required |
| Application Domain | — | Space flight systems |