SI8273AB-IM vs SI8275BBD-IM1 Vergleich
Detaillierter Direktvergleich von SI8273AB-IM von Skyworks Solutions und SI8275BBD-IM1 von Skyworks Solutions. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Skyworks Solutions
SI8275BBD-IM1 - 4A Dual Isolated Gate Driver, 2.5kV | Skyworks
SI8275BBD-IM1 ✓ AktivSpezifikationsvergleich
| Parameter | SI8273AB-IM | SI8275BBD-IM1 |
|---|---|---|
| Marke | Skyworks Solutions | Skyworks Solutions |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $1,94 |
| Product Type | Isolated Gate Driver (ISOdriver) | — |
| Isolation Technology | Silicon RF capacitive isolation | — |
| Isolation Withstand Voltage | 2500 Vrms (per UL1577) | — |
| Number of Channels | 2 (High-Side / Low-Side) | 2 |
| Peak Output Current | 4 A source/sink | 4 A per channel |
| Input Configuration | Single PWM or dual digital inputs (VIA, VIB) | — |
| Propagation Delay | 60 ns (typical) | — |
| Input Supply Voltage (VDD) | 2.5 V to 5.5 V | — |
| UVLO Threshold | 3 V (programmable on some variants) | 8 V |
| Ausgangskonfiguration | Independent HS and LS drivers | — |
| Common-Mode Transient Immunity (CMTI) | Industry-leading (per datasheet) | 200 kV/us |
| Betriebstemperaturbereich | -40C to +125C | -40C to +125C |
| Gehäuse | 14-pin LGA (5x5 mm) | 14-QFN (5x5 mm) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Isolation Voltage | — | 2500 Vrms |
| Typical Rise Time | — | 10.5 ns |
| Typical Fall Time | — | 13.3 ns |
| Maximum Propagation Delay | — | 75 ns |
| UVLO Hysteresis | — | [DATA_NEEDED: UVLO hysteresis voltage] |
| Undervoltage Lockout | — | Yes (8 V) |
| Dead-Time Control | — | Programmable via DT pin |
| Input De-glitch Filter | — | Yes |
| Driver Configuration | — | Dual isolated driver with deglitch |
| Technology | — | RF coupling (capacitive-isolation digital isolator) |
| Latch-up Immunity | — | 400 kV/us (per Si8275BBD-IS1 variant) |
| Input Supply Voltage VDD1 | — | [DATA_NEEDED: VDD1 range] |
| Output Supply Voltage VDD2 | — | [DATA_NEEDED: VDD2 range] |