SS310L-RUG vs SS310L Vergleich

Detaillierter Direktvergleich von SS310L-RUG von Taiwan Semiconductor und SS310L von Taiwan Semiconductor. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter SS310L-RUG SS310L
Marke Taiwan Semiconductor Taiwan Semiconductor
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,36 $0,03
Diode Type Schottky Barrier Rectifier —
Reverse Voltage (VRRM) 100 V —
Average Forward Current (IF(AV)) 3 A —
Configuration Single, independent Single Diode
Betriebstemperaturbereich -55C to +150C —
Gehäuse Sub SMA (surface mount) Sub SMA (low-profile SMA / DO-214AC style)
Montageart Surface Mount Surface Mount
Forward Voltage (VF) [DATA_NEEDED: Forward Voltage (VF)] [DATA_NEEDED: VF at rated current]
Reverse Leakage Current (IR) [DATA_NEEDED: Reverse Leakage Current (IR)] [DATA_NEEDED: IR at rated VR]
Reverse Recovery Time (trr) [DATA_NEEDED: Reverse Recovery Time (trr)] —
Non-Repetitive Surge Current (IFSM) [DATA_NEEDED: Non-Repetitive Surge Current (IFSM)] —
Thermal Resistance (Rth j-a) [DATA_NEEDED: Thermal Resistance (Rth j-a)] —
RoHS-Status Compliant (RUG suffix) [DATA_NEEDED: RoHS status]
Packaging Option Reel (RUG suffix) —
MSL-Level [DATA_NEEDED: MSL Level] —
Device Type — Schottky Barrier Rectifier
Repetitive Peak Reverse Voltage (VRRM) — 100 V
Average Forward Rectified Current — 3 A
Series — SS3xL (40 V to 100 V range)
Betriebs-Sperrschichttemperatur — -55C to +125C
Non-Repetitive Peak Surge Current — [DATA_NEEDED: IFSM rating]
Reverse Recovery — Schottky (majority carrier, near-zero recovery)
Lead-Free / Low Profile Suffix — L (lead-free low-profile variant)
Typical Application — Low-voltage rectification, freewheeling, reverse polarity protection

Datenblätter & Ressourcen

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