TLE75080ESDXUMA1 vs ITS724GFUMA1 Vergleich

Detaillierter Direktvergleich von TLE75080ESDXUMA1 von Infineon und ITS724GFUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter TLE75080ESDXUMA1 ITS724GFUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $2,55 $2,30
Number of Channels 8 4
Channel Configuration High-side, N-channel MOSFET —
Per-Channel Output Current 330 mA —
Supply Voltage Range 4.5 V to 28 V —
Load Dump Tolerance 40 V —
Cranking Voltage (Limp Home) 3.0 V —
On-State Resistance (typ per channel) 1.5 ohm —
Communication Interface 16-bit SPI (daisy-chain capable) —
Diagnostic Features Open-load detect (on/off), overcurrent, overtemperature, short to battery/GND —
Protection Functions Reverse battery, load dump, thermal shutdown, current limit —
Betriebstemperaturbereich -40 C to +150 C -40 C to +85 C (industrial)
Gehäuse PG-TSDSO-24-21 (exposed pad) PG-DSO-20-32
Montageart Surface Mount Surface Mount
MSL-Level 2A —
RoHS-Status Compliant Compliant
Manufacturer — Infineon Technologies
Part Series — ITS724G / PROFET Industrial
Funktion — 4-Channel Smart High-Side Power Switch
Topologie — High-Side N-Channel MOSFET with charge pump
Continuous Output Current per Channel — 3.3 A
On-State Resistance (typ) — 65 mΩ per channel
Supply Voltage Range (Vbb) — -10 V to 16 V
Load Dump Protection — External resistor required
Input Compatibility — CMOS-compatible, ground-referenced
Diagnostic Output — Open-drain status flag
Technology — Smart SIPMOS (vertical MOSFET with charge pump)

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