TLP183(GB-TPL,E vs TLP183(TPL Vergleich
Detaillierter Direktvergleich von TLP183(GB-TPL,E von Toshiba und TLP183(TPL von Toshiba. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Toshiba
TLP183(GB-TPL,E - 3750Vrms Phototransistor Optocoupler SO6 | Toshiba
TLP183(GB-TPL,E ✓ Aktiv
Spezifikationsvergleich
| Parameter | TLP183(GB-TPL,E | TLP183(TPL |
|---|---|---|
| Marke | Toshiba | Toshiba |
| Kategorie | Optocouplers | Optocouplers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,09 | $0,19 |
| Product Type | Phototransistor Output Optocoupler | — |
| Number of Channels | 1 | 1 |
| Isolation Voltage (rms) | 3750 Vrms | — |
| Gehäuse | 6-SOP (4-lead SO6), surface mount | 6-SO / SO6 (4 active pins) |
| CTR Rank | GB (100% to 600% at IF=5 mA, VCE=5 V) | — |
| Forward Current (IF) max | 50 mA | — |
| Reverse Voltage (VR) max | 5 V | — |
| Collector-Emitter Voltage (VCEO) max | 80 V | — |
| Emitter-Base Voltage (VEBO) max | 7 V | — |
| Collector Current (IC) max | 50 mA | — |
| Betriebstemperaturbereich | -55°C to +125°C | -55 C to +125 C |
| Input LED Type | GaAs infrared emitting diode | — |
| Output Transistor Type | Silicon NPN phototransistor | — |
| Montageart | Surface Mount (SMT) | Surface Mount |
| Packaging | Tape and Reel (TPL suffix) | — |
| RoHS-Status | RoHS compatible | Compliant |
| Applications | PLC, AC Adapter, I/O Interface, Office Machine | — |
| Isolation Voltage | — | 3750 Vrms |
| Ausgangstyp | — | NPN Phototransistor |
| Input Type | — | DC (GaAs Infrared LED) |
| Kollektor-Emitter-Spannung (Vceo) | — | 80 V |
| Emitter-Collector Voltage (VECO) | — | 7 V |
| Forward Current (IF) Max | — | 50 mA |
| Forward Voltage (VF) Typ | — | 1.25 V at IF = 10 mA |
| Current Transfer Ratio (CTR) Min | — | 50 % at IF = 5 mA, VCE = 5 V |
| Rise/Fall Time (typ) | — | 4 us (ton/toff) |
| MSL-Level | — | 1 |