TPS53513RVER vs TPS53515RVER Vergleich
Detaillierter Direktvergleich von TPS53513RVER von Texas Instruments und TPS53515RVER von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Texas Instruments
TPS53513RVER - 8A, 18V Sync Buck Converter | Texas Instruments
TPS53513RVER ✓ AktivTexas Instruments
TPS53515RVER - 12A Sync Buck Converter 18V | Texas Instruments
TPS53515RVER ✓ AktivSpezifikationsvergleich
| Parameter | TPS53513RVER | TPS53515RVER |
|---|---|---|
| Marke | Texas Instruments | Texas Instruments |
| Kategorie | DC-DC Converters | DC-DC Converters |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,55 | $2,32 |
| Topologie | Synchronous step-down (buck) converter | Synchronous Buck (Step-Down) Converter |
| Control Mode | D-CAP3 adaptive on-time | D-CAP3 (Adaptive On-Time) |
| Eingangsspannungsbereich | 1.5 V to 18 V | — |
| Ausgangsspannungsbereich | 0.6 V to 5.5 V (adjustable) | 0.6 V to 5.5 V |
| Maximaler Ausgangsstrom | 8 A continuous | — |
| Referenzspannung | 600 mV +/-0.5% | 600 mV +/- 0.5% |
| High-Side MOSFET Rds(on) | 13.8 mOhm (integrated) | — |
| Low-Side MOSFET Rds(on) | 5.9 mOhm (integrated) | — |
| Anzahl der Ausgänge | 1 | — |
| Output Capacitor Type | All-ceramic supported | — |
| Integrated Boost Switch | Yes | — |
| Operating Ambient Temperature | -40C to +85C | — |
| Gehäuse | 28-VFQFN Exposed Pad (RVE), VQFN-28 | 28-VFQFN Exposed Pad (VQFN-CLIP) |
| Montageart | Surface Mount | Surface Mount |
| Packing | Tape & Reel (R suffix) | — |
| RoHS-Status | RoHS-Exempt & Green (per TI E2E forum) | Compliant |
| Unit Price (reference) | $5.1761 (as of 2026-09-10, Heisener) | — |
| Input Voltage Range (VIN) | — | 1.5 V to 18 V |
| Bias Supply Voltage Range (VBIAS) | — | 4.5 V to 25 V |
| Continuous Output Current | — | 12 A |
| High-Side MOSFET RDS(on) | — | 13.8 mOhm |
| Low-Side MOSFET RDS(on) | — | 5.9 mOhm |
| Output Capacitor Support | — | All Ceramic |
| Internal Boost Switch | — | Integrated (no external bootstrap diode) |
| Betriebstemperaturbereich | — | -40 C to +85 C (ambient) |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| Reference Efficiency (12A, inductor-on-top) | — | > 87%, ~2.6 W loss, 12 mV ripple |